发明名称 |
Semiconductor device manufacturing method |
摘要 |
<p>The present invention relates to a semiconductor device manufacturing method having an etching step of an electrode material film (15, 17) constituting a capacitor using ferroelectric substance or high-dielectric substance, etching of a conductive film (15, 17) that acts as an electrode (15a, 17a) of the capacitor formed over a semiconductor substrate (1) is carried out in an atmosphere containing bromine, and a heating temperature of the semiconductor substrate (1) is set in a range of 300 °C to 600 °C, otherwise etching of at least the conductive film (15, 17) is carried out in an atmosphere to which only hydrogen bromide and oxygen are supplied from an outside.
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申请公布号 |
EP1341220(A3) |
申请公布日期 |
2007.08.01 |
申请号 |
EP20030251108 |
申请日期 |
2003.02.25 |
申请人 |
FUJITSU LIMITED |
发明人 |
KIKUCHI, HIDEAKI;KOMURO, GENICHI;ENDO, MITSUHIRO;HIRAI, NAOKI |
分类号 |
H01L21/02;H01L21/302;C23F4/00;H01L21/3065;H01L21/3213;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;H01L27/115 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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