NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A nitride semiconductor light emitting device and its manufacturing method are provided to improve a light emissive efficiency by controlling the distribution and size of quantum dots and using the scattered reflection effect of a surface of an active layer. A first N type nitride semiconductor layer(14) having a surface with irregularly arranged protrusions is formed on a substrate(11). An active layer(16) is formed along the surface of the first N type nitride semiconductor layer. A P type nitride layer(17) is formed on the active layer. A buffer layer(12) is formed at a portion between the substrate and the first N type nitride semiconductor layer. An undoped nitride semiconductor layer(13) is formed on the buffer layer. A plurality of quantum dots are formed on the resultant structure by using the irregularly arranged protrusions in the active layer forming process.