| 摘要 |
A method for forming micro patterns through a damascene process is provided to effectively prevent the characteristics from being changed according to variations of line width in a device using a wiring line. A mold layer(200) is formed on a semiconductor substrate, and then first trenches are formed on the mold layer. First micro patterns are formed to fill the first trenches. Second trenches(230) are formed on a portion of the mold layer between first micro patterns. Second micro patterns are formed to fill the second trenches. The second trenches are positioned between the first trenches to have the same line width as that of the first trenches.
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