| 摘要 |
A method for manufacturing a transistor in a semiconductor device is provided to control easily the Vt of the transistor and to maximize an ion implantation effect by forming a dual polysilicon structure in a substrate. A channel Vt controlling ion implantation and a field stop ion implantation are performed on a semiconductor substrate(110) with a lower structure. A gate region etching process is performed on the substrate. A gate oxide layer(160) is filled therein. Two trenches spaced apart from each other are formed at a center portion of the gate oxide layer. A polysilicon layer(170) and a gate metal are sequentially deposited on the resultant structure including the two trenches. A gate pattern is formed by performing an etching process on the resultant structure. A halo ion implantation is performed on a junction region of the resultant structure. A spacer made of an insulating layer is formed at both sidewalls of the gate pattern. Source/drain regions(210) are formed in the substrate by an ion implantation.
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