| 摘要 |
A semiconductor device with a blind scheme for boosting an internal voltage using an external supply voltage is disclosed. The semiconductor device includes a voltage detector for detecting a voltage level of the external supply voltage being applied to the semiconductor device, a pulse generator for being controlled by a logic level value output from the voltage detector and generating a pulse signal having a variable pulse width, an internal voltage generator for generating the internal voltage for driving an internal circuit of the semiconductor device, and a driving unit for providing the external supply voltage to an output terminal of the internal voltage generator that outputs the internal voltage in response to the pulse signal.
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