| 摘要 |
<p>Provided are a photomask, which has high beam contrast and is manufactured in a simple manner, and an exposure method using the same, which is easily capable of forming a photoresist pattern with a desired profile. A photomask(100) comprises: a transparent substrate(110); and a transmissivity control film pattern(120) which is disposed on the transparent substrate(110) and has a thickness(d) which exhibits the maximum beam contrast while maintaining the same phase as an incident light. The exposure method includes the steps of: forming a photoresist layer on a patterning layer disposed on a wafer; and transmitting a light onto the photomask(100) to change a solubility of predetermined portions of the photoresist layer.</p> |
