| 摘要 |
<p>A method for forming micro double patterns using a spacer is provided to enlarge a width of a resist pattern in an edge region by subjecting the edge region to a reflow process. A resist pattern(104a) is formed on an etching pattern layer(102) on a semiconductor substrate(100). The substrate is subjected to a resist reflow process to enlarge a width of the resist pattern in an edge region. The etching pattern layer is etched to form first patterns, and then the resist pattern is removed. A spacer is formed on sidewalls of the first patterns, and then a second pattern is formed to fill a space between the first patterns to have the same height as that of the first patterns.</p> |
