发明名称 |
Single step, high temperature nucleation process for a lattice mismatched substrate |
摘要 |
A single step process for nucleation and subsequent epitaxial growth on a lattice mismatched substrate is achieved by pre-treating the substrate surface with at least one group III reactant or at least one group II reactant prior to the introduction of a group V reactant or a group VI reactant. The group III reactant or the group II reactant is introduced into a growth chamber at an elevated growth temperature to wet a substrate surface prior to any actual crystal growth. Once the pre-treatment of the surface is complete, a group V reactant or a group VI reactant is introduced to the growth chamber to commence the deposition of a nucleation layer. A buffer layer is then grown on the nucleation layer providing a surface upon which the epitaxial layer is grown preferably without changing the temperature within the chamber.
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申请公布号 |
US7250360(B2) |
申请公布日期 |
2007.07.31 |
申请号 |
US20050069040 |
申请日期 |
2005.03.02 |
申请人 |
CORNELL RESEARCH FOUNDATION, INC. |
发明人 |
SHEALY JAMES R.;SMART JOSEPH A. |
分类号 |
H01L21/28;H01L21/3205 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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