发明名称 EUV lithography filter
摘要 Filters for EUV lithography, methods of manufacture thereof, and methods of filtering in an EUV lithography system are disclosed. The filter comprises a nanotube material layer sandwiched by two thin material layers that are highly transmissive and provide structural support for the nanotube material layer. The filter is supported on at least one side by a patterned structural support. The filter mitigates debris, provides spectral purity filtering, or both.
申请公布号 US7250620(B2) 申请公布日期 2007.07.31
申请号 US20050039170 申请日期 2005.01.20
申请人 SEMATECH INC. 发明人 WURM STEFAN;BAKSHI VIVEK
分类号 G03C5/00;G03B27/42;G03B27/54 主分类号 G03C5/00
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