| 发明名称 |
Yttrium-doped bismuth titanate thin film and preparation thereof |
| 摘要 |
A bismuth yttrium titanate (BYT) film having the composition of formula (I) has enhanced residual polarization and electric fatigue properties with excellent ferroelectric property, and therefore, it can be advantageously used in an electric or electronic device including a FRAM device: <?in-line-formulae description="In-line Formulae" end="lead"?>Bi<SUB>4-x</SUB>Y<SUB>x</SUB>Ti<SUB>3</SUB>O<SUB>12</SUB> (I)<?in-line-formulae description="In-line Formulae" end="tail"?> wherein x is an integer of 0.1 to 2.
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| 申请公布号 |
US7250228(B2) |
申请公布日期 |
2007.07.31 |
| 申请号 |
US20030672753 |
申请日期 |
2003.09.26 |
| 申请人 |
POSTECH FOUNDATION |
发明人 |
RHEE SHI-WOO;KANG SANG-WOO |
| 分类号 |
B32B9/00;C01G29/00;C04B35/475;C23C16/00;C23C16/40;C23C16/56;H01B3/10;H01B3/12;H01L21/314;H01L21/316;H01L21/8246;H01L27/105 |
主分类号 |
B32B9/00 |
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