发明名称 Non-volatile memory comprising means for distorting the output of memory cells
摘要 The present invention relates to a non-volatile memory comprising a memory array comprising functional memory cells and non-functional memory cells linked to at least one non-functional word line. A word line address decoder comprises a special decoding section linked to the non-functional word line, for selecting the non-functional word line when a functional word line is read-selected, such that non-functional memory cells are selected simultaneously with the functional memory cells, and distort the reading of the functional memory cells. Application particularly to integrated circuits for smart cards.
申请公布号 US7251151(B2) 申请公布日期 2007.07.31
申请号 US20050106048 申请日期 2005.04.14
申请人 STMICROELECTRONICS S.A. 发明人 LISART MATHIEU
分类号 G11C11/00;G11C7/24;G11C16/22;G11C16/26 主分类号 G11C11/00
代理机构 代理人
主权项
地址