发明名称 |
OVERLAY VERNIER KEY AND THE METHOD FOR FABRICATING OVERLAY VERNIER KEY |
摘要 |
<p>An overlay vernier key and a method for forming the same are provided to prevent reading error due to a size difference between patterns formed in a cell region by closely disposing plural vernier patterns. A semiconductor substrate(100) comprises a cell region and a scribe lane region. Plural vernier patterns(112) are formed on the scribe lane of the semiconductor substrate in a ring pattern, and the vernier patterns form an edge side. The vernier patterns are closely disposed to generate a signal of intensity sufficient to be detected by an overlay measuring device. The vernier pattern has a size and a pitch which are equal to those of the pattern in the cell region.</p> |
申请公布号 |
KR100746619(B1) |
申请公布日期 |
2007.07.31 |
申请号 |
KR20060058932 |
申请日期 |
2006.06.28 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHO, BYEONG HO;KO, SUNG WOO |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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