发明名称 OVERLAY VERNIER KEY AND THE METHOD FOR FABRICATING OVERLAY VERNIER KEY
摘要 <p>An overlay vernier key and a method for forming the same are provided to prevent reading error due to a size difference between patterns formed in a cell region by closely disposing plural vernier patterns. A semiconductor substrate(100) comprises a cell region and a scribe lane region. Plural vernier patterns(112) are formed on the scribe lane of the semiconductor substrate in a ring pattern, and the vernier patterns form an edge side. The vernier patterns are closely disposed to generate a signal of intensity sufficient to be detected by an overlay measuring device. The vernier pattern has a size and a pitch which are equal to those of the pattern in the cell region.</p>
申请公布号 KR100746619(B1) 申请公布日期 2007.07.31
申请号 KR20060058932 申请日期 2006.06.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHO, BYEONG HO;KO, SUNG WOO
分类号 H01L21/027 主分类号 H01L21/027
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