| 摘要 |
A method for forming an aluminum contact in a semiconductor device is provided to reliably form a metal contact by selectively depositing aluminum only on a barrier metal layer plug. A first interlayer dielectric(30) is formed on a semiconductor substrate(10) having a lower conductive layer, and then is etched to form a contact hole which exposes a portion of the lower conductive layer. A barrier metal layer plug(40) is formed in the contact hole, and then an aluminum layer is selectively formed only on the barrier metal layer plug through chemical vapor deposition. A second interlayer dielectric(60) is formed to cover the aluminum layer. The second interlayer and the aluminum layer are etched to form an aluminum contact.
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