MOS TRANSISTOR HAVING A STRAINED CHANNEL AND METHOD OF FABRICATING THE SAME

摘要

An MOS transistor and its manufacturing method are provided to maximize a strained channel effect without the degradation of junction leakage current characteristics of source/drain regions. A gate pattern(110) is formed on a semiconductor substrate(100). A doped region is formed in the substrate. The doped region is adjacent to a channel region under the gate pattern. Epitaxial growth layers(126a,126b) are formed in the doped region. Each epitaxial growth layer is composed of a first epitaxial growth layer spaced apart from the gate pattern and a second epitaxial growth layer prolonged from the first epitaxial growth layer to the gate pattern. The thickness of the second epitaxial growth layer is smaller than that of the first epitaxial growth layer.