| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to align reliably a wafer in a photolithography process, to improve the reliability of the device and to reduce a processing time by preventing the damage of an align key in a contact hole planarizing process. An align key region of a trench type is formed on a substrate with a gate electrode. An insulating layer is formed on the resultant structure. Contact holes(220a,220b) are selectively formed through the insulating layer by using etching. A metal film(240) is formed on the align key region and the contact holes. A polymer layer(250) is formed on the resultant structure corresponding to the align key region. The metal film and the polymer layer are planarized by using CMP. The polymer layer is removed from the align key region by using a chemical treatment. The planarization rate of the polymer layer is the same as that of the metal film.</p> |
