NON-VOLATILE MEMORY DEVICE

摘要

A non-volatile memory device is provided to reduce the possibility of read error while increasing a read speed, by improving on-cell current characteristics of an EEPROM memory cell. A memory cell block(MCB1,MCB2) has a number of memory cells(MC) including a memory transistor(T1) comprising a floating gate and a control gate and connected to a local bit line and a selection transistor(T2) serially connected to the memory transistor and connected to a source line. A first switching block connects a global bit line to the local bit line selectively. A second switching block controls memory cells in the memory cell block. The first switching block comprises at least two switching devices connected between the global bit line and the local bit line in parallel.