SEMICONDUCTOR DIVECE USING MAGNETIC DOMAIN WALL MOVING

摘要

A semiconductor device is provided to move exactly a magnetic domain wall of a magnetic as much as one bit without a notch by moving the magnetic domain wall using a pulse magnetic field with one-time on holding time corresponding to 40 to 80 % of a vibration cycle of the magnetic domain wall. A semiconductor device includes a magnetic wire(300) with a plurality of magnetic domains(30). The magnetic wire has a plurality of magnetic domain walls(35), wherein the magnetic domain wall is capable of being moved by a pulse current. All the magnetic wires are made of the same material. The intensity of the pulse current is in a range of 1.5 x10^7 to 2.0 x10^10 A/cm. The pulse current has one-time on holding time corresponding to 40 to 80 % of a vibration cycle of the magnetic domain wall. The width of the magnetic wire is in a range of 5 to 100 nm.