SEMICONDUCTOR MEMORY DEVICE HAVING ADVANCED DATA INPUT/OUTPUT PATH

摘要

A semiconductor memory device having an advanced data input/output path is provided to prevent the degradation of operation speed due to loads of peripheral circuits connected to a bit line, and to reduce chip size by reducing the number of column pass gates. In a semiconductor memory device having a data input/output path, a first and a second memory cell cluster(MCC1,MCC2) are divided in operation while sharing an equal bit line pair of the data input/output path. A third and a fourth memory cell cluster(MCC3,MCC4) are connected to a word line connected to the first and the second memory cell cluster, and are divided in operation while sharing a bit line pair different from the bit line pair. A column pass gate(84) switches one of the bit line pairs connected to the four memory cell clusters to a common sense amplifier in response to a column selection signal, in order to constitute the data input/output path.