| 摘要 |
A method for manufacturing a semiconductor substrate, a method for fabricating a semiconductor device and the semiconductor device are provided to reduce regions of support holes occupying in an SOI(Silicon On Insulator) element forming region. A second semiconductor layer is formed on a first semiconductor layer, the second semiconductor layer having an etch selectivity less than that of the first semiconductor layer. A portion of the second semiconductor layer and a portion of the first semiconductor layer are removed to form support holes(19,21,22). A support formation layer is formed on a semiconductor substrate to cover the support holes. An area other than an area including the support hole and the element region therein is etched to expose a support and an exposed surface. The first semiconductor layer is etched through the exposed surface to form a cavity. A buried insulating layer is formed in the cavity, and the second semiconductor layer is planarized.
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