发明名称 CHEMICAL MECHANICAL POLISHING APPARATUS
摘要 A CMP apparatus is provided to keep a process temperature in an aiming range during a CMP process by controlling the temperature of a heating unit connected with a turn table using a temperature measuring unit and a control unit. A CMP apparatus includes a turn table(100) attached with a polishing pad, a heating unit, a polishing head, a slurry supply unit, a retainer ring, a temperature measuring unit and a control unit. The heating unit(106) is connected with the turn table to heat the turn table. The polishing head(110) is used for holding and rotating a wafer. The slurry supply unit(140) is used for supplying slurry to a portion between the wafer and the polishing pad. The retainer ring(120) is used for preventing the deviation of the wafer in a wafer polishing process. The temperature measuring unit(130) is embedded in the retainer ring to detect the temperature of the polishing pad. The control unit is connected with the temperature measuring unit to control the temperature of the heating unit according to the results of the temperature measuring unit.
申请公布号 KR20070077683(A) 申请公布日期 2007.07.27
申请号 KR20060007399 申请日期 2006.01.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, SANG SEON;JEON, YOUNG SOO;KWON, YOUNG MIN
分类号 H01L21/304 主分类号 H01L21/304
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