| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for producing a silicon single crystal controlling the surface temperature distribution of a silicon melt when growing the silicon single crystal and thus lessening fluctuation of diameter caused by variation of the temperature of a silicon melt surface. SOLUTION: In the single crystal production apparatus 30 for growing the silicon single crystal 3 while pulling from the melt 4 stored in a crucible, a heat-retaining body 40 is provided near a meniscus to retain the temperature of the silicon melt 4 in the vicinity of the meniscus. COPYRIGHT: (C)2007,JPO&INPIT
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