发明名称 |
Method for fabricating high performance metal-insulator-metal capacitor (MIMCAP) |
摘要 |
A method of fabricating a high performance metal-insulator-metal capacitor (MIMCAP) includes providing a first inter-level dielectric (ILD) layer over an isolation region; forming a MIMCAP pattern in the first ILD layer over the isolation region; depositing a conformal conductive liner over the MIMCAP pattern and the first ILD layer; depositing an insulator over the conformal conductive liner; forming a contact pattern through the conformal conductive liner, the insulator and the first inter-level dielectric (ILD) layer; depositing a second conformal conductive liner over the MIMCAP pattern, the contact pattern and the first ILD layer; and depositing a conductive stud over the second conformal conductive liner in the MIMCAP pattern and the contact pattern. The method is applicable to both a conventional bulk semiconductor substrate and a silicon-on-insulator (SOI) substrate.
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申请公布号 |
US2007173029(A1) |
申请公布日期 |
2007.07.26 |
申请号 |
US20060340340 |
申请日期 |
2006.01.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ABADEER WAGDI W.;MANDELMAN JACK A.;RADENS CARL J.;TONTI WILLIAM |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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