| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride crystal having a practical size for manufacturing a high performance light-emitting diode, an LD or the like without complicating a process, using an expensive reactor, and making the crystal size small; and to provide a method and an apparatus capable of growing such a group III nitride crystal. <P>SOLUTION: When the group III nitride crystal is grown in a first reaction vessel 101 by using a mixed melt 102 containing an alkali metal and at least a group III metal and a nitrogen raw material introduced from the outside of the first reaction vessel 101, the vapor of the alkali metal is shut up in the first reaction vessel 101. <P>COPYRIGHT: (C)2007,JPO&INPIT |
