| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element which can be miniaturized while preventing the deterioration of the heat dissipation thereof. SOLUTION: An n-type GaAs buffer layer 4, an n-type GaInP intermediate layer 6, an n-type AlGaInP clad layer 8, an undoped MQW active layer 10, a p-type AlGaInP clad layer 12, a p-type AlGaInP clad layer 14, and a p-type GaAs cap layer 16, are provided on an n-type GaAs substrate 2. The p-type clad layer 14 and the p-type cap layer 16 are formed in a ridge 15, and each layer in the range from the n-type substrate 2 to the p-type clad layer 12 is formed in a narrower width 17. An SiO<SB>2</SB>film 18 is formed on the side faces of the ridge 15, the surface of the narrower width 17, and the surface of the stage 2a of the n-type substrate 2. A p-side electrode layer 23 is formed on the surface of the SiO<SB>2</SB>film 18 corresponding to the ridge 15 and the narrower width 17. The heat produced in the active layer 10 is dissipated via the SiO<SB>2</SB>film 18 and the p-side electrode layer 23 to the submount on which this semiconductor laser device 1 is mounted. COPYRIGHT: (C)2007,JPO&INPIT
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