| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabrication capable of improving yield in manufacture of a semiconductor device. SOLUTION: An insulating film 11 for forming a side wall insulating film of a gate electrode is deposited on the main surface of a semiconductor wafer 1, and then a process is applied to uniformize film thickness distribution of the insulating film 11. In this process, while an etching liquid nozzle 36 is moved from the outer peripheral side of the main surface of the semiconductor wafer 1 to the central part side above the semiconductor wafer 1 that is fixed to a rotating stage 32 of an etching device 31 for rotation, an etching liquid 37 is supplied to the main surface of the semiconductor wafer 1 from the etching liquid nozzle 36. The moving speed of the etching liquid nozzle 36 is controlled according to the film thickness distribution of the insulating film 11 of the semiconductor wafer 1. The moving speed of the etching liquid nozzle 36 is slower in the region of large change rate in film thickness of the insulating film 11 in radial direction of the semiconductor wafer 1 than in the region of smaller change rate. COPYRIGHT: (C)2007,JPO&INPIT
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