发明名称 Method of processing semiconductor substrate
摘要 A method of processing a semiconductor substrate for manufacturing a semiconductor device includes: obtaining pattern density information of the semiconductor product; applying the pattern density information to a previously determined relation between pattern densities and etch parameters so as to obtain process conditions for the semiconductor product; and etching the semiconductor substrate under the process conditions.
申请公布号 US2007172968(A1) 申请公布日期 2007.07.26
申请号 US20070651863 申请日期 2007.01.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG SUNG-WOO;CHIN IN-SIK;CHOI WON-SOO
分类号 H01L21/66;H01L21/302 主分类号 H01L21/66
代理机构 代理人
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