发明名称 |
Method of processing semiconductor substrate |
摘要 |
A method of processing a semiconductor substrate for manufacturing a semiconductor device includes: obtaining pattern density information of the semiconductor product; applying the pattern density information to a previously determined relation between pattern densities and etch parameters so as to obtain process conditions for the semiconductor product; and etching the semiconductor substrate under the process conditions.
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申请公布号 |
US2007172968(A1) |
申请公布日期 |
2007.07.26 |
申请号 |
US20070651863 |
申请日期 |
2007.01.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG SUNG-WOO;CHIN IN-SIK;CHOI WON-SOO |
分类号 |
H01L21/66;H01L21/302 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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