发明名称 Method and apparatus for modifying an etch profile
摘要 A plasma reactor includes a plasma processing chamber which can, for example, play the role of a vacuum chamber and an electrode disposed inside the plasma processing chamber. The plasma reactor further includes a plasma control structure imbedded entirely within the electrode. The plasma control structure is configured and arranged to alter characteristics of a plasma generated inside the processing chamber.
申请公布号 US2007170155(A1) 申请公布日期 2007.07.26
申请号 US20060335683 申请日期 2006.01.20
申请人 FINK STEVEN T 发明人 FINK STEVEN T.
分类号 B23K9/00 主分类号 B23K9/00
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