| 摘要 |
A method for manufacturing a semiconductor device in accordance with an embodiment of the present invention provides a channel region formed over a device isolation structure to form a semiconductor device including a SOI (Silicon-on-Insulator) channel structure, thereby decreasing ion implanting concentration of a channel region and improving t<SUB>WR </SUB>(Write Recovery time) and LTRAS (Long Time for Row Address Strobe) characteristics of the device. |
