| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which complication of fabrication process is suppressed and the capacity of a capacitor for storing data is increased. <P>SOLUTION: A plurality of wiring layers are provided in the peripheral circuit portion and the memory cell has a capacitor where a plate electrode, a capacitance insulating film formed on the sidewall of an opening in the plate electrode, and a storage electrode buried in the opening where the capacitance insulating film is formed on the sidewall are provided in correspondence with the plurality of wiring layers and the storage electrodes are connected with each other. <P>COPYRIGHT: (C)2007,JPO&INPIT |
