| 摘要 |
The invention relates to a method of manufacturing a semiconductor device ( 10 ) in which a semiconductor body ( 1 ) of silicon is provided, at a surface thereof, with a semiconductor region ( 4 ) of a first conductivity type, in which region a second semiconductor region ( 2 A, 3 A) of a second conductivity type, opposite to the first conductivity type, is formed forming a pn-junction with the first semiconductor region ( 4 ) by the introduction of dopant atoms of the second conductivity type into the semiconductor body ( 1 ), and wherein, before the introduction of said dopant atoms, an amorphous region is formed in the semiconductor body ( 1 ) by means of an amorphizing implantation of inert atoms, and wherein, after the amorphizing implantation, temporary dopant atoms are implanted in the semiconductor body ( 1 ), and wherein, after introduction of the dopant atoms of the second conductivity type, the semiconductor body is annealed by subjecting it to a heat treatment at a temperature in the range of about 500 to about 800° C., preferably from 550 to 750° C. Dopant atoms of the second conductivity type are introduced into the semiconductor body ( 1 ) by means of ion implantation. In this way pn-junctions are formed which are very suitable for forming source and drain extensions ( 2 A, 3 A) of a MOSFET that are very shallow, thermally stable, steep and low ohmic.
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