发明名称 SiCOH dielectric
摘要 A porous composite material useful in semiconductor device manufacturing, in which the diameter (or characteristic dimension) of the pores and the pore size distribution (PSD) is controlled in a nanoscale manner and which exhibits improved cohesive strength (or equivalently, improved fracture toughness or reduced brittleness), and increased resistance to water degradation of properties such as stress-corrosion cracking, Cu ingress, and other critical properties is provided. The porous composite material is fabricating utilizing at least one bifunctional organic porogen as a precursor compound
申请公布号 US2007173071(A1) 申请公布日期 2007.07.26
申请号 US20060336726 申请日期 2006.01.20
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 AFZALI-ARDAKANI ALI;GATES STEPHEN M.;GRILL ALFRED;NEUMAYER DEBORAH A.;NGUYEN SON;PATEL VISHNUBHAI V.
分类号 H01L21/469;H01L23/58 主分类号 H01L21/469
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