| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a metal polishing solution which can have a quick polishing rate and a good copper/tantalum polishing selectivity, and can improve a flatness with less dishing. <P>SOLUTION: The metal polishing solution is used for chemical-mechanical planarizing a substrate for a semiconductor integrated circuit, and contains a compound expressed by formula (I). Preferably, a carboxy group, a hydroxyl group, carbamoyl group, an alkyl group, an aryl group, a hetero ring group, an amino group, a halogen group, or a substituent as a partial structure of these groups is introduced in molecules of the compound expressed by formula (I). <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
