| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method a high drive current, a transmission conductance, and a sub-threshold characteristic can be improved and a floating body potential effect can be restrained, while suppressing increase in the parasitic capacitance, between the drain and the channel and increase in the sub-threshold leakage current due to DIBL effect. SOLUTION: In the semiconductor device, an SOI-MOSFET 1 has a heavily-doped diffusion region 17c, formed in a support substrate 11a, a heavily-doped diffusion region 17d, formed in the support substrate 11a to be deeper than the heavily-doped diffusion region 17c, and a gate electrode 14 formed on the heavily-doped diffusion region 17c. Furthermore, the SOI-MOSFET 1 has a drain region 15d, formed in an SOI layer 11c on the heavily-doped diffusion region 17d, and a source region 15s formed in the SOI layer 11c, on a side opposite to the drain region 15d, sandwiching below the gate electrode 14. COPYRIGHT: (C)2007,JPO&INPIT
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