发明名称 GAS SENSOR AND METHOD OF MANUFACTURING SAME
摘要 PROBLEM TO BE SOLVED: To provide a gas sensor having high sensitivity, manufacturable at low cost with excellent productivity and reproducibility, and capable of miniaturization and reduction of power consumption because of being operated stably even at a room temperature. SOLUTION: After forming a material amorphous layer comprising a tin oxide (SnO<SB>2</SB>) having the thickness of 10-30 nm or the like on an insulating substrate 1, the amorphous layer is polycrystallized by rapid heating processing, to thereby form a metal oxide semiconductor fine crystal layer 3 which is a gas sensitive layer. Resultantly, the fine crystal layer 3 is acquired, comprising a mono-particle layer (monolayer structure) wherein fine crystal particles 2 having respectively a uniform particle size which is approximately the same as the thickness of the amorphous layer and having an approximately spherical shape are bonded through a crystal grain boundary in the face direction. Island-shaped sensitizers (catalysts) 4 comprising platinum (Pt) or the like are arranged on the center part uniformly by a sputtering method or the like, to thereby form a sensor domain 7. In this case, the sensitizers 4 are arranged in a honeycomb-shaped grid pattern by using as a mask a polystyrene fine particle layer having a monolayer densest filling structure. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007187476(A) 申请公布日期 2007.07.26
申请号 JP20060003905 申请日期 2006.01.11
申请人 SONY CORP 发明人 ITO DAISUKE
分类号 G01N27/12 主分类号 G01N27/12
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