| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
The invention is directed to a method for manufacturing semiconductor device. The method comprises steps of providing a substrate and then forming a dielectric material-containing device over the substrate. A plasma vapor deposition process is performed to form a dielectric layer over the substrate. A first baking process is performed.
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| 申请公布号 |
US2007173065(A1) |
申请公布日期 |
2007.07.26 |
| 申请号 |
US20060307165 |
申请日期 |
2006.01.26 |
| 申请人 |
MAO CHIH-JEN;YANG KUO-WEI;SHIH HUI-SHEN;CHUANG CHUN-HAN |
发明人 |
MAO CHIH-JEN;YANG KUO-WEI;SHIH HUI-SHEN;CHUANG CHUN-HAN |
| 分类号 |
H01L21/469 |
主分类号 |
H01L21/469 |
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