Semiconductor circuit device, has two field-effect transistors with two active areas, which has channel area lying between source area and drain area, where active area of one transistor is arranged between active areas of other transistor

摘要

The device has two field-effect transistors (T1,T2), which have two active areas (AA11, AA22). Each active area has a channel area lying between a source area (S11,S22) and a drain area (D11,D22). A dielectric insulated gate (G11,G22) is developed at the surface of the channel area to control the channel area. The active area (AA22) of one transistor is arranged between active areas (AA11,AA12) of other transistor. An insulating layer with good heat coupling characteristics is formed between the active areas. The source areas or the drain areas are electrically connected with one another.