发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
<p>Disclosed is a plasma processing apparatus wherein a processing is carried out by using a plasma of a process gas generated by a microwave. Specifically disclosed is a plasma processing apparatus comprising a stage (34) on which an object (W) to be processed is placed, and a vacuum processing chamber (24) housing the stage. The processing chamber (24) has a cylindrical side wall (24A) and defines a processing space (S) for forming a plasma of a process gas over the stage. A microwave introducing window (76) is so formed in the side wall (24A) of the processing chamber in such a manner that the window surrounds the processing space. A microwave introducing device (80) is so arranged as to surround the side wall (24A) of the processing chamber. The microwave introducing device (80) introduces a microwave generated by a generator (84) into generally the center of the processing space (S) through the microwave introducing window (76).</p> |
申请公布号 |
WO2007083653(A1) |
申请公布日期 |
2007.07.26 |
申请号 |
WO2007JP50575 |
申请日期 |
2007.01.17 |
申请人 |
TOKYO ELECTRON LIMITED;HONGOH, TOSHIAKI |
发明人 |
HONGOH, TOSHIAKI |
分类号 |
H01L21/205;C23C16/511;H01L21/306;H05H1/46 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|