| 摘要 |
A sputter target formed based on various multicomponent materials or an individual multi-phase materials, i.e., materials in which optional genuine alloys or individual mixed crystals (e.g., for coating TFT displays) are not formed therein is provided, wherein particles causing the deterioration of the production ratio due to the erosion during sputtering are hardly formed in the structure of the sputter target. In a sputter target which is formed of a material comprising two or more phases or components, and of which at least one minority phase has a low fusibility in a matrix and a higher melting point than the matrix, the sputter target is characterized in that particles of the at least one minority phase or agglomerates formed of the particles have a maximum average size of 10 mum, and a density of the material is at least 98% of a theoretic density. The particles or the agglomerates have a maximum average size of 50 mum, preferably 1 mum. The melting point of the at least one minority phase is at least 500 deg.C, preferably at least 1000 deg.C higher than that of the matrix. The material contains a metal selected from the group consisting of W, Mo, Ta, Nb, Cr, V, Ti, Cu, Ni, Al, Ag, Au, Pt, and Ru.
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