发明名称 Apparatus using manhattan geometry having non-manhattan current flow
摘要 A device is described, including a first diffusion region having a first terminal, a second diffusion region having a second terminal, and a channel region disposed between the first diffusion region and the second diffusion region. Further, the first terminal and the second terminal are offset to enable a non-Manhattan current flow. A system is also described, including the previously described device and a second transistor. The pathway for the flow of the majority of the current carriers in the device defines a first direction. The second transistor also has at least two terminals, and a pathway for a majority of current carriers between the two terminals defines a second direction. The angle between the first direction and the second direction is nonzero and acute.
申请公布号 US2007170473(A1) 申请公布日期 2007.07.26
申请号 US20060339003 申请日期 2006.01.24
申请人 SUN MICROSYSTEMS, INC. 发明人 O'NEILL THOMAS G.;BOSNYAK ROBERT J.
分类号 H01L29/76;H01L21/8234 主分类号 H01L29/76
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