LATERAL PHOTODETECTORS WITH TRANSPARENT ELECTRODES
摘要
<p>A photodetector includes a substrate and a layer of Ge formed on the substrate. A plurality of n-type doped regions and a plurality of p-type doped regions are formed in Ge region. These doped regions formed an alternating pattern. Electrodes are formed on n-type doped regions and on the p-type doped regions. The utilization of transparent electrodes increases the sensitivity of the photodetector without impacting speed.</p>
申请公布号
WO2007084137(A1)
申请公布日期
2007.07.26
申请号
WO2006US02435
申请日期
2006.01.20
申请人
MASSACHUSETTS INSTITUTE OF TECHNOLOGY;GIZIEWICZ, WOJCIECH, P.;KIMERLING, LIONEL;MICHEL, JURGEN;PAN, DONG;SARGENT, EDWARD
发明人
GIZIEWICZ, WOJCIECH, P.;KIMERLING, LIONEL;MICHEL, JURGEN;PAN, DONG;SARGENT, EDWARD