| 摘要 |
A memory is provided to suppress the increase of circuit size while preventing the generation of imprint, and to prevent the reduction of access demand time and the increase of power consumption. A plurality of memory cell blocks includes a plurality of memory cells. A refresh control unit performs a read operation and a rewrite operation on the memory cell. A first frequency detection unit detects access frequency to the memory cell. A second frequency detection unit detects access frequency every memory cell block. A third frequency detection unit detects the frequency when the sum of the access frequency every memory cell block counted by the second frequency detection unit does not reach a fixed frequency, when the sum of the access frequency to the memory cell has reached a fixed frequency by the first frequency detection unit.
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