| 摘要 |
A method of manufacturing a semiconductor substrate includes: forming on a semiconductor base a first isolation layer for isolating an element region from another region; forming a first semiconductor layer on the semiconductor base; forming a second semiconductor layer on the first semiconductor layer, the second semiconductor layer having an etch selectivity less than that of the first semiconductor layer; forming a support hole by removing a portion of the second semiconductor layer and a portion of the first semiconductor layer each corresponding to the support hole; forming a support formation layer above the semiconductor base so as to cover the support hole and the second semiconductor layer; forming a support and an exposed surface for exposing part of an end of each of the first semiconductor layer and the second semiconductor layer by etching an area other than that including the support hole and the element region therein, the first semiconductor layer and the second semiconductor layer being located under the support; forming a cavity between the second semiconductor layer in the element region and the semiconductor base by etching away the first semiconductor layer through the exposed surface; forming a buried insulating layer in the cavity; and performing planarization above the second semiconductor layer to remove part of the support located on the second semiconductor layer; wherein the forming a support hole forms a first support hole at the boundary between the element region and the first isolation layer.
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