Memory circuit including a resistive memory element and method for operating such a memory circuit

摘要

The present invention relates to a memory circuit and method of operating the same. In at least one embodiment, the memory circuit includes a resistive memory element coupled to a plate potential by a first terminal; a bit line which is connectable to a second terminal of the resistive memory element; a programming circuit operable to change the resistance of the resistive memory element; a bleeder circuit operable to provide a bleeding current to or from the bit line due to a change of the resistance of the resistive memory element caused by the programming circuit.