发明名称 |
Program method of flash memory capable of compensating reduction of read margin between states due to hot temperature stress |
摘要 |
A program method of a flash memory device having first and-second bitlines connected with a plurality of memory cells for storing multi-bit data indicating one of a plurality of states. The program method includes programming memory cells, connected to a selected row and first or second bitlines, with multi-bit data; and reprogramming programmed memory cells connected to a row disposed directly below the selected row and the first bitlines or the second bitlines, whereby increasing a read margin between adjacent states reduced due to high temperature stress (HTS).
|
申请公布号 |
US2007171726(A1) |
申请公布日期 |
2007.07.26 |
申请号 |
US20060593478 |
申请日期 |
2006.11.07 |
申请人 |
KANG DONG-KU;LIM YOUNG-HO |
发明人 |
KANG DONG-KU;LIM YOUNG-HO |
分类号 |
G11C16/04;G11C8/00;G11C11/34;G11C16/06 |
主分类号 |
G11C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|