发明名称 Plasma Immersion Ion Source With Low Effective Antenna Voltage
摘要 A plasma source includes a chamber that contains a process gas. The chamber includes a dielectric window that passes electromagnetic radiation. A RF power supply generates a RF signal. At least one RF antenna with a reduced effective antenna voltage is connected to the RF power supply. The at least one RF antenna is positioned proximate to the dielectric window so that the RF signal electromagnetically couples into the chamber to excite and ionize the process gas, thereby forming a plasma in the chamber.
申请公布号 US2007170867(A1) 申请公布日期 2007.07.26
申请号 US20060617785 申请日期 2006.12.29
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 PERSING HAROLD M.;SINGH VIKRAM;WINDER EDMUND J.
分类号 H01J7/24;C23F1/00 主分类号 H01J7/24
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