发明名称 |
CBRAM memory device and method for writing to a resistive memory cell in a CBRAM memory device |
摘要 |
A memory device and method of operating the same. In one embodiment, the memory device includes a resistive memory cell including a resistive memory element wherein the resistive memory element is designed to acquire a low resistance state when applying a programming voltage and acquire to a high resistance state when applying an erasing voltage; and wherein the writing time for changing the resistance state of the resistive memory element can be relatively reduced.
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申请公布号 |
US2007171697(A1) |
申请公布日期 |
2007.07.26 |
申请号 |
US20050318331 |
申请日期 |
2005.12.23 |
申请人 |
HOENIGSCHMID HEINZ;DIMITROVA MILENA;LIAW CORVIN;ANGERBAUER MICHAEL |
发明人 |
HOENIGSCHMID HEINZ;DIMITROVA MILENA;LIAW CORVIN;ANGERBAUER MICHAEL |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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