发明名称 PROCESS FOR PRODUCING SILICEOUS FILM AND SUBSTRATE WITH SILICEOUS FILM PRODUCED THEREBY
摘要 A process for producing a siliceous film with quality uniform irrespective of locality or groove interior or exterior wherein in the groove interior there is no void or crack. This substrate with siliceous film can be produced by first forming an insulating film of high hydrogen content on the surface of an uneven silicon substrate, subsequently coating the substrate with a composition containing a polysilazane compound and thereafter heating the coating product to thereby convert the polysilazane compound into a silicon dioxide film.
申请公布号 WO2007083654(A1) 申请公布日期 2007.07.26
申请号 WO2007JP50577 申请日期 2007.01.17
申请人 AZ ELECTRONIC MATERIALS (JAPAN) K.K.;AZ ELECTRONIC MATERIALS USA CORP.;ISHIKAWA, TOMONORI;NAGURA, TERUNO 发明人 ISHIKAWA, TOMONORI;NAGURA, TERUNO
分类号 H01L21/316;C23C16/40;H01L21/76 主分类号 H01L21/316
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