LASER IRRADIATION APPARATUS, LASER IRRADIATION METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a laser irradiation apparatus and a laser irradiation method capable of performing laser treatment to a semiconductor film appropriately by arranging slits in an optical system using a deflector and an fθlens, and reducing the ratio of a region where a microcrystal is formed as accounting for the entire region where laser beams are applied, and further to provide a semiconductor manufacturing apparatus using such a laser irradiation apparatus and a laser irradiation method. SOLUTION: The fθlens having image-side telecentric characteristics, or the slit for changing a shape according to the incident angle of laser beams are used for an optical system. The slit is arranged between the fθlens and an irradiation surface, and an image in the opening of the slit is projected onto the irradiation surface by a projection lens. With the above configuration, laser beams can be applied uniformly to the entire region in the scanning range of the laser beams. COPYRIGHT: (C)2007,JPO&INPIT