| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting device where a COD (catastrophic optical damage) after aging is improved, and also to provide a manufacturing method of a nitride semiconductor laser device. SOLUTION: In the nitride semiconductor light-emitting device having a coat film formed at a light emitting part, the light emitter is made of a nitride semiconductor, and the coat film contacting with the light emitter is made of an oxynitride. The manufacturing method of the nitride semiconductor laser device having a coat film formed on the end face of a resonator comprises a process of forming the end face of the resonator by cleavage, and a process of forming the coat film made of the oxynitride on the end face of the resonator. COPYRIGHT: (C)2007,JPO&INPIT
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