| 摘要 |
An organic memory is provided. The organic memory at least comprises a plurality of select lines, a plurality of data lines, a bit cell array, and a plurality of digital sensing circuits. The bit cell array comprises a plurality of bit cells, wherein each bit cell comprises an organic memory cell and a switch element. Each digital sensing circuit comprises a current-to-voltage converter and a sensing block circuit. Therefore, the present invention provides a complete digital sensing mechanism of an organic memory IC, which is practicable and suitable for mass-production.
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